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ST93C66 ST93C67
4K (256 x 16 or 512 x 8) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST93C66 version - 3V to 5.5V for ST93C67 version SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93C66 and ST93C67 are replaced by the M93C66 DESCRIPTION This specification covers a range of 4K bit serial EEPROM products, the ST93C66 specified at 5V 10% and the ST93C67 specified at 3V to 5.5V. In the text, products are referred to as ST93C66. The ST93C66 is a 4K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON's High EnduranceSingle Polysilicon CMOS technology. The memory is accessed through a serial input (D) and output (Q). The 4K bit memory is divided into either 512 x 8 bit bytes or 256 x 16 bit words. The organization may be selected by a signal applied on the ORG input. Table 1. Signal Names
S D Q C ORG VCC VSS Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground
8 1
PSDIP8 (B) 0.4mm Frame
8 1
SO8 (CM) 150mil Width
Figure 1. Logic Diagram
VCC
D C S ORG ST93C66 ST93C67
Q
VSS
AI01252B
July 1997
This is information on a product still in production bu t not recommended for new de signs.
1/13
ST93C66, ST93C67
Figure 2A. DIP Pin Connections
Figure 2B. SO Pin Connections
ST93C66 ST93C67 S C D Q 1 2 3 4 8 7 6 5
AI01253B
ST93C66 ST93C67 VCC DU ORG VSS S C D Q 1 2 3 4 8 7 6 5
AI01254C
VCC DU ORG VSS
Warning: DU = Don't Use
Warning: DU = Don't Use
Table 2. Absolute Maximum Ratings (1)
Symbol TA TSTG TLEAD VIO VCC VESD Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec Value -40 to 125 -65 to 150 215 260 -0.3 to VCC +0.5 -0.3 to 6.5
(2)
Unit C C C V V V V
Input or Output Voltages (Q = VOH or Hi-Z) Supply Voltage Electrostatic Discharge Voltage (Human Body model) Electrostatic Discharge Voltage (Machine model)
(3)
7000 1000
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100pF, 1500 ). 3. EIAJ IC-121 (Condition C) (200pF, 0 ).
DESCRIPTION (cont'd) The memory is accessed by a set of instructions which includes Read a byte/word, Write a byte/word, Erase a byte/word, Erase All and Write All. A Read instruction loads the address of the first byte/word to be read into an internal address pointer. The data contained at this address is then clocked out serially. The address pointer is automatically incremented after the data is output and, if the Chip Select input (S) is held High, the ST93C66 can output a sequential stream of data bytes/words. In this way, the memory can be read as a data stream from 8 to 4096 bits long, or continuously as the address counter automatically rolls over to '00' when the highest address is reached. Programming is internally self-timed (the external clock signal on C input may be discon2/13
nected or left running after the start of a Write cycle) and does not require an erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at one time into one of the 512 bytes or 256 words. After the start of the programming cycle, a Busy/Ready signal is available on the Data output (Q) when Chip Select (S) is driven High. The design of the ST93C66 and the High Endurance CMOS technologyused for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles and a data retention of 40 years. The DU (Don't Use) pin does not affect the function of the memory and it is reserved for use by SGSTHOMSON during test sequences.The pin may be left unconnected or may be connected to VCC or VSS. Direct connection of DU to VSS is recommended for the lowest standby power consumption.
ST93C66, ST93C67
AC MEASUREMENT CONDITIONS
Input Rise and Fall Times Input Pulse Voltages Input Timing Reference Voltages Output Timing Reference Voltages 20ns 0.4V to 2.4V 1V to 2.0V 0.8V to 2.0V
Figure 3. AC Testing Input Output Waveforms
2.4V
2V 1V
2.0V 0.8V OUTPUT
AI00815
0.4V
Note that Output Hi-Z is defined as the point where data is no longer driven.
INPUT
Table 3. Capacitance (1) (TA = 25 C, f = 1 MHz )
Symbol C IN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 5 5 Unit pF pF
Note: 1. Sampled only, not 100% tested.
Table 4. DC Characteristics (TA = 0 to 70C or -40 to 85C; VCC = 4.5V to 5.5V or 3V to 5.5V)
Symbol ILI ILO ICC Parameter Input Leakage Current Output Leakage Current Supply Current (TTL Inputs) Supply Current (CMOS Inputs) ICC1 VIL Supply Current (Standby) Input Low Voltage (D, C, S) Test Condition 0V VIN VCC 0V VOUT VCC, Q in Hi-Z S = VIH, f = 1 MHz S = VIH, f = 1 MHz S = VSS, C = VSS, ORG = VSS or VCC VCC = 5V 10% 3V VCC 4.5V VCC = 5V 10% 3V VCC 4.5V Output Low Voltage IOL = 2.1mA IOL = 10 A IOH = -400A IOH = -10A 2.4 VCC - 0.2 -0.3 -0.3 2 0.8 VCC Min Max 2.5 2.5 3 2 50 0.8 0.2 VCC VCC + 1 VCC + 1 0.4 0.2 Unit A A mA mA A V V V V V V V V
VIH
Input High Voltage (D, C, S)
VOL
VOH
Output High Voltage
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ST93C66, ST93C67
Table 5. AC Characteristics (TA = 0 to 70C or -40 to 85C; VCC = 4.5V to 5.5V or 3V to 5.5V)
Symbol tSHCH tCLSH tDVCH tCHDX Alt tCSS tSKS tDIS tDIH Parameter Chip Select High to Clock High Clock Low to Chip Select High Input Valid to Clock High Temp. Range: grade 1 Clock High to Input Transition Temp. Range: grades 3, 6 Test Condition Min 50 100 100 100 200 500 500 0 250 Note 1 250 500 200 Note 2 Note 2 250 250 10 0 1 Max Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms MHz
tCHQL tCHQV tCLSL tSLCH tSLSH tSHQV tSLQZ tCHCL tCLCH tW fC
tPD0 tPD1 tCSH
Clock High to Output Low Clock High to Output Valid Clock Low to Chip Select Low Chip Select Low to Clock High
tCS tSV tDF tSKH tSKL tWP fSK
Chip Select Low to Chip Select High Chip Select High to Output Valid Chip Select Low to Output Hi-Z Clock High to Clock Low Clock Low to Clock High Erase/Write Cycle time Clock Frequency
Notes: 1. Chip Select must be brought low for a minimum of 250 ns (tSLSH) between consecutive instruction cycles. 2. The Clock frequency specification calls for a minimum clock period of 1 s, therefore the sum of the timings tCHCL + tCLCH must be greater or equal to 1 s. For example, if tCHCL is 250 ns, then tCLCH must be at least 750 ns.
Figure 4. Synchronous Timing, Start and Op-Code Input
tCLSH C tSHCH S tDVCH D START OP CODE
tCHCL
tCLCH
tCHDX OP CODE
START
OP CODE INPUT
AI01428
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ST93C66, ST93C67
Figure 5. Synchronous Timing, Read or Write
C tCLSL S tDVCH D An tCHQL Q15/Q7 tCHDX A0 tSLQZ Q0 tCHQV tSLSH
Hi-Z Q
ADDRESS INPUT
DATA OUTPUT
AI00820C
tSLCH C tCLSL S tDVCH D An tCHDX A0/D0 tSHQV Hi-Z Q BUSY tW ADDRESS/DATA INPUT WRITE CYCLE
AI01429
tSLSH
tSLQZ READY
MEMORY ORGANIZATION The ST93C66 is organized as 512 bytes x 8 bits or 256 words x 16 bits. If the ORG input is left unconnected (or connected to VCC) the x16 organization is selected, when ORG is connected to Ground (VSS) the x8 organization is selected. When the ST93C66 is in standby mode, the ORG input should be unconnected or set to either VSS or VCC in order to achieve the minimum power consumption. Any voltage between VSS and VCC applied to ORG may increase the standby current value.
POWER-ON DATA PROTECTION In order to prevent data corruption and inadvertent write operations during power up, a Power On Reset (POR) circuit resets all internal programming circuitry and sets the device in the Write Disable mode. When VCC reaches its functional value, the device is properly reset (in the Write Disable mode) and is ready to decode and execute an incoming instruction. A stable VCC must be applied, before applying any logic signal.
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ST93C66, ST93C67
INSTRUCTIONS The ST93C66 has seven instructions, as shown in Table 6. The op-codes of the instructions are made up of 2 bits. The op-code is followed by an address for the byte/word which is eight bits long for the x16 organization or nine bits long for the x8 organization. Each instruction is preceded by the rising edge of the signal applied on the Chip Select (S) input (assuming that tha Clock C is low). The data input D is then sampled upon the following rising edges of the clock C untill a '1' is sampled and decoded by the ST93C66 as a Start bit. The ST93C66 is fabricated in CMOS technology and is therefore able to run from zero Hz (static input signals) up to the maximum ratings (specified in Table 5). Read The Read instruction (READ) outputs serial data on the Data Output (Q). When a READ instruction is received, the instruction and address are decoded and the data from the memory is transferred into an output shift register. A dummy '0' bit is output first, followed by the 8 bit byte or the 16 bit word with the MSB first. Output data changes are triggered by the Low to High transition of the Clock (C). The ST93C66 will automatically increment the address and will clock out the next byte/word as long as the Chip Select input (S) is held High. In this case the dummy '0' bit is NOT output between bytes/words and a continuous stream of data can be read. Erase/Write Enable and Disable The Erase/Write Enable instruction (EWEN) authorizes the following Erase/Write instructions to be executed, the Erase/Write Disable instruction (EWDS) disables the execution of the following Erase/Write instructions. When power is first applied, the ST93C66 enters the Disable mode. When the EWEN instruction is executed, Write instructions remain enabled until an Erase/Write Disable instruction (EWDS) is executed or VCC falls below the power-on reset threshold. To protect the memory contents from accidental corruption, it is advisable to issue the EWDS instruction after every write cycle. The READ instruction is not affected by the EWEN or EWDS instructions. Erase The Erase instruction (ERASE) programs the addressed memory byte or word bits to '1'. Once the address is correctly decoded, the falling edge of the Chip Select input (S) triggers a self-timed erase cycle. If the ST93C66 is still performing the erase cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C66 will ignore any data on the bus. When the erase cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C66 is ready to receive a new instruction. Write The Write instruction (WRITE) is followed by the address and the 8 or 16 data bits to be written. Data input is sampled on the Low to High transition of the clock. After the last data bit has been sampled, Chip Select (S) must be brought Low before the next rising edge of the clock (C) in order to start the self-timed programming cycle. If the ST93C66 is still performing the write cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C66 will ignore any data on the bus.
Table 6. Instruction Set
Instruction READ WRITE EWEN EWDS ERASE ERAL WRAL Description Read Data from Memory Write Data to Memory Erase/Write Enable Erase/Write Disable Erase Byte or Word Erase All Memory Write All Memory with same Data Op-Code 10 01 00 00 11 00 00 x8 Org Address (ORG = 0) (1) A8-A0 A8-A0 11XXX XXXX 00XXX XXXX A8-A0 10XXX XXXX 01XXX XXXX D7-D0 Data Q7-Q0 D7-D0 x16 Org Address (ORG = 1) (1) A7-A0 A7-A0 11XX XXXX 00XX XXXX A7-A0 10XX XXXX 01XX XXXX D15-D0 Data Q15-Q0 D15-D0
Note: 1. X = don't care bit.
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ST93C66, ST93C67
Figure 6. READ, WRITE, EWEN, EWDS Sequences
READ
S
D
1 1 0 An
A0
Q ADDR OP CODE
Qn DATA OUT
Q0
WRITE
S CHECK STATUS D 1 0 1 An A0 Dn D0
Q ADDR OP CODE DATA IN BUSY READY
ERASE WRITE ENABLE
S
ERASE WRITE DISABLE 1 0 0 1 1 Xn X0
S
D
D
1 0 0 0 0 Xn X0
OP CODE
OP CODE
AI00878C
Notes: 1. An: n = 7 for x16 org. and 8 for x8 org. 2. Xn: n = 5 for x16 org. and 6 for x8 org.
When the write cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C66 is ready to receive a new instruction. Programming is internally self-timed (the external clock signal on C input may be disconnected or left
running after the start of a programming cycle) and does not require an Erase instruction prior to the Write instruction (The Write instruction includes an automatic erase cycle before programing data).
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ST93C66, ST93C67
Figure 7. ERASE, ERAL Sequences
ERASE
S CHECK STATUS D 1 1 1 An A0
Q ADDR OP CODE BUSY READY
ERASE ALL
S CHECK STATUS D 1 0 0 1 0 Xn X0
Q ADDR OP CODE
AI00879B
BUSY
READY
Notes: 1. An: n = 7 for x16 org. and 8 for x8 org. 2. Xn: n = 5 for x16 org. and 6 for x8 org.
Figure 8. WRAL Sequence
WRITE ALL
S CHECK STATUS D 1 0 0 0 1 Xn X0 Dn D0
Q ADDR OP CODE
AI00880C
DATA IN
BUSY
READY
Note: 2. Xn: n = 5 for x16 org. and 6 for x8 org.
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ST93C66, ST93C67
Erase All The Erase All instruction (ERAL) erases the whole memory (all memory bits are set to '1'). A dummy address is input during the instruction transfer and the erase is made in the same way as the ERASE instruction. If the ST93C66 is still performing the erase cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C66 will ignore any data on the bus. When the erase cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C66 is ready to receive a new instruction. Write All For correct operation, an ERAL instruction should be executed before the WRAL instruction: the WRAL instruction DOES NOT perform an automatic erase before writing. The Write All instruction (WRAL) writes the Data Input byte or word to all the addresses of the memory. If the ST93C66 is still performing the write cycle, the Busy signal (Q = 0) will be returned if S is driven high, and the ST93C66 will ignore any data on the bus. When the write cycle is completed, the Ready signal (Q = 1) will indicate (if S is driven high) that the ST93C66 is ready to receive a new instruction. READY/BUSY Status During every programming cycle (after a WRITE, ERASE, WRAL or ERAL instruction) the Data Output (Q) indicates the Ready/Busy status of the memory when the Chip Select (S) is driven High. Once the ST93C66 is Ready, the Ready/Busy status is available on the Data Output (Q) until a new start bit is decoded or the Chip Select (S) is brought Low. COMMON I/O OPERATION The Data Output (Q) and Data Input (D) signals can be connected together, through a current limiting resistor, to form a common, one wire data bus. Some precautions must be taken when operating the memory with this connection, mostly to prevent a short circuit between the last entered address bit (A0) and the first data bit output by Q. The reader may also refer to the SGS-THOMSON application note "MICROWIRE EEPROM Common I/O Operation". CLOCK PULSE COUNTER The ST93C66 offers a functional security filtering glitches on the clock input (C), the Clock pulse counter. In a normal environment, the ST93C66 expects to receive the exact amount of data on the D input, that is, the exact amount of clock pulses on the C input. In a noisy environment, the number of pulses received (on the clock input C) may be greater than the clock pulsesdelivered by the Master (Microcontroller) driving the ST93C66. In such a case, a part of the instruction is delayed by one bit (see Figure 9), and it may induce an erroneous write of data at a wrong address. The ST93C66 has an on-chip counterwhich counts the clock pulses from the Start bit until the falling edge of the Chip Select signal. For the WRITE instructions, the number of clock pulses incoming to the counter must be exactly 20 (with the Organisation by 8) from the Start bit to the falling edge of Chip Select signal (1 Start bit + 2 bits of Op-code + 9 bits of Address + 8 bits of Data = 20): if so, the ST93C66 executes the WRITE instruction; if the number of clock pulses is not equal to 20, the instruction will not be executed (and data will not be corrupted). In the same way, when the Organisation by 16 is selected, the number of clock pulses incoming to the counter must be exactly 27 (1 Start bit + 2 bits of Op-code + 8 bits of Address + 16 bits of Data = 27) from the Start bit to the falling edge of Chip Select signal: if so, the ST93C66 executes the WRITE instruction; if the number of clock pulses is not equal to 27, the instruction will not be executed (and data will not be corrupted). The clock pulse counter is active only on ERASE and WRITE instructions (WRITE, ERASE, ERAL, WRALL).
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ST93C66, ST93C67
Figure 9. WRITE Sequence with One Clock Glitch
S
C
D
An START "0" WRITE "1"
An-1 Glitch
An-2 D0
ADDRESS AND DATA ARE SHIFTED BY ONE BIT
AI01395
ORDERING INFORMATION SCHEME Example: ST93C66 CM 3 TR
Operating Voltage 66 67 4.5V to 5.5V 3V to 5.5V CM B
Package PSDIP8 0.4 mm Frame SO8 150mil Width
Temperature Range 1 6 3
(1)
Option TR Tape & Reel Packing
0 to 70 C -40 to 85 C -40 to 125 C
Note: 1. Temperature range on request only.
Devices are shipped from the factory with the memory content set at all "1's" (FFFFh for x16, FFh for x8). For a list of available options (Operating Voltage, Package, etc...) or for further information on any aspect of this device, please contact the SGS-THOMSON Sales Office nearest to you.
10/13
ST93C66, ST93C67
PSDIP8 - 8 pin Plastic Skinny DIP, 0.4mm lead frame
Symb Typ A A1 A2 B B1 C D E E1 e1 eA eB L N CP
PSDIP8
mm Min Max 4.80 0.70 3.10 0.38 1.15 0.38 9.20 7.62 - 6.30 2.54 - 8.40 - 3.60 0.58 1.65 0.52 9.90 - 7.10 - - 9.20 3.00 8 0.10 3.80 0.100 0.300 Typ
inches Min Max 0.189 0.028 0.122 0.015 0.045 0.015 0.362 - 0.248 - 0.331 - 0.142 0.023 0.065 0.020 0.390 - 0.280 - - 0.362 0.118 8 0.004 0.150
A2 A1 B B1 D
N
A L eA eB C
e1
E1
1
E
PSDIP-a
Drawing is not to scale.
11/13
ST93C66, ST93C67
SO8 - 8 lead Plastic Small Outline, 150 mils body width
Symb Typ A A1 B C D E e H h L N CP
SO8
mm Min 1.35 0.10 0.33 0.19 4.80 3.80 1.27 - 5.80 0.25 0.40 0 8 0.10 Max 1.75 0.25 0.51 0.25 5.00 4.00 - 6.20 0.50 0.90 8 0.050 Typ
inches Min 0.053 0.004 0.013 0.007 0.189 0.150 - 0.228 0.010 0.016 0 8 0.004 Max 0.069 0.010 0.020 0.010 0.197 0.157 - 0.244 0.020 0.035 8
h x 45 A C B e D CP
N
E
1
H A1 L
SO-a
Drawing is not to scale.
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ST93C66, ST93C67
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1997 SGS-THOMSON Microelectronics - All Rights Reserved (R) MICROWIRE is a registered trademark of National Semiconductor Corp. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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